| PART |
Description |
Maker |
| BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| TA130-155-49-32 |
13 - 15.5 GHz 2W Amplifiers
|
Transcom, Inc.
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz
|
Mini-Circuits
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| AD8353ACP-R2 AD8353ACP-REEL7 AD8353-EVAL |
100 MHz - 2.7 GHz RF Gain Blocks Silicon Bipolar Amplifiers
|
Analog Devices
|
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| TA053-059-38-36 |
5.3 - 5.9 GHz 4 W Amplifiers
5.3 - 5.9 GHz 4 W Amplifiers
|
Transcom, Inc.
|
| MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
MOTOROLA[Motorola, Inc]
|
| BFQ71 Q62702-F775 A0534 |
From old datasheet system
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
|
Infineon
|
